Y10T 117/1016
With means for treating single-crystal [e.g., heat treating]
Official title: with means for treating single-crystal [e.g., heat treating]
Y10T117/1016 (With means for treating single-crystal [e.g., heat treating]) appears on 222 US grants and 161 published applications in this corpus.
Search patents in Y10T- Granted patents
- 222
- Published applications
- 161
- Assignees
- 148
- Inventors
- 428
- Latest grant
- 2 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 7 | 0 |
| 1996 | 3 | 0 |
| 1997 | 6 | 0 |
| 1998 | 6 | 0 |
| 1999 | 12 | 0 |
| 2000 | 7 | 0 |
| 2001 | 8 | 2 |
| 2002 | 11 | 15 |
| 2003 | 17 | 14 |
| 2004 | 7 | 6 |
| 2005 | 7 | 17 |
| 2006 | 7 | 6 |
| 2007 | 3 | 18 |
| 2008 | 29 | 27 |
| 2009 | 7 | 12 |
| 2010 | 10 | 7 |
| 2011 | 7 | 15 |
| 2012 | 20 | 11 |
| 2013 | 11 | 1 |
| 2014 | 11 | 4 |
| 2015 | 7 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 2 |
| 2021 | 2 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 1 |
| 2025 | 1 | 0 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Fins on crucible or gussets on refractory lining for facilitating exclusion of impurities from a boule2 Sep 2025US 12,404,600 B2Siemens Medical Solutions USA, Inc.
- Passivation of nonlinear optical crystals26 Nov 2024US 12,152,316 B1KLA Corporation
- Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions30 Nov 2021US 11,186,922 B2Panasonic Corporation
- Passivation of nonlinear optical crystals23 Nov 2021US 11,180,866 B2KLA Corporation
- Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures7 Jul 2020US 10,704,160 B2Arizona Board of Regents on behalf of Arizona State University
- Methods for preparing an ingot in an ingot puller apparatus having a heat shield disposed below a side heater1 Oct 2026US 2026/0297797 A1GlobalWafers Co., Ltd.
- Fins on crucible or gussets on refractory lining for facilitating exclusion of impurities from a boule13 Aug 2026US 2026/0234831 A1Siemens Medical Solutions USA, Inc.
- Fins on crucible or gussets on refractory lining for facilitating exclusion of impurities from a boule5 Dec 2024US 2024/0401227 A1Siemens Medical Solutions USA, Inc.
- Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot with such apparatus12 May 2022US 2022/0145492 A1GlobalWaters Co., Ltd.
- Apparatus for producing group-iii nitride semiconductor crystal10 Dec 2020US 2020/0385886 A1Panasonic Corporation
Most cited
By later US patents
- Device and method for depositing one or more layers on a substrate367US 6,849,241 B2Aixtron SE · 2005
- Substrate processing apparatus and method132US 7,867,926 B2Tokyo Electron Limited · 2011
- Growth of bulk single crystals of aluminum nitride70US 5,858,086 A1999
- Apparatus for growing silicon crystals65US 5,264,189 AMitsubishi Materials Corporation · 1993
- Method and system for manufacturing semiconductor device64US 5,803,965 ALG Electronics Inc. · 1998