Y10T 117/00
Single-crystal, oriented-crystal, and epitaxy growth processes
Official title: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Y10T117/00 (Single-crystal, oriented-crystal, and epitaxy growth processes) appears on 2,467 US grants and 1,759 published applications in this corpus.
Search patents in Y10T- Granted patents
- 2,467
- Published applications
- 1,759
- Assignees
- 852
- Inventors
- 3,736
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 30 | 0 |
| 1977 | 26 | 0 |
| 1978 | 22 | 0 |
| 1979 | 12 | 0 |
| 1980 | 27 | 0 |
| 1981 | 25 | 0 |
| 1982 | 22 | 0 |
| 1983 | 17 | 0 |
| 1984 | 13 | 0 |
| 1985 | 18 | 0 |
| 1986 | 34 | 0 |
| 1987 | 25 | 0 |
| 1988 | 20 | 0 |
| 1989 | 23 | 0 |
| 1990 | 44 | 0 |
| 1991 | 33 | 0 |
| 1992 | 52 | 0 |
| 1993 | 31 | 0 |
| 1994 | 40 | 0 |
| 1995 | 61 | 0 |
| 1996 | 42 | 0 |
| 1997 | 47 | 0 |
| 1998 | 78 | 0 |
| 1999 | 124 | 0 |
| 2000 | 104 | 0 |
| 2001 | 79 | 42 |
| 2002 | 86 | 107 |
| 2003 | 81 | 132 |
| 2004 | 80 | 90 |
| 2005 | 67 | 105 |
| 2006 | 74 | 105 |
| 2007 | 69 | 130 |
| 2008 | 110 | 129 |
| 2009 | 64 | 149 |
| 2010 | 84 | 151 |
| 2011 | 84 | 112 |
| 2012 | 107 | 116 |
| 2013 | 99 | 85 |
| 2014 | 100 | 85 |
| 2015 | 76 | 75 |
| 2016 | 54 | 27 |
| 2017 | 57 | 20 |
| 2018 | 34 | 18 |
| 2019 | 25 | 11 |
| 2020 | 10 | 13 |
| 2021 | 7 | 8 |
| 2022 | 11 | 23 |
| 2023 | 11 | 13 |
| 2024 | 14 | 8 |
| 2025 | 9 | 3 |
| 2026 | 5 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Single crystal growth apparatus4 Aug 2026US 12,698,569 B2Novel Crystal Technology, Inc.
- Ingot growing apparatus23 Jun 2026US 12,662,753 B2Hanwha Corporation
- Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof5 May 2026US 12,618,171 B2II-Vi Advanced Materials, LLC
- Systems and methods for producing a single crystal silicon ingot using a vaporized dopant7 Apr 2026US 12,595,584 B2GlobalWafers Co., Ltd.
- Methods for preparing an ingot in an ingot puller apparatus having a heat shield disposed below a side heater1 Oct 2026US 2026/0297797 A1GlobalWafers Co., Ltd.
- Fins on crucible or gussets on refractory lining for facilitating exclusion of impurities from a boule13 Aug 2026US 2026/0234831 A1Siemens Medical Solutions USA, Inc.
- Apparatus, systems, and methods of using atomic hydrogen radicals with selective epitaxial deposition24 Apr 2025US 2025/0132155 A1APPLIED Materials.Inc.
- Devices and methods for growing crystals17 Apr 2025US 2025/0122640 A1Meishan Boya Advanced Materials Co., Ltd.
- Apparatus, systems, and methods of using atomic hydrogen radicals with selective epitaxial deposition13 Mar 2025US 2025/0087485 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Apparatus and method for growth of a thin film940US 6,511,539 B1ASM America, Inc. · 2003
- Apparatus for atomic layer chemical vapor deposition543US 6,812,157 B12004
- Combinatorial molecular layer epitaxy device499US 6,344,084 B12002
- Protein crystallization in microfluidic structures458US 6,409,832 B2Micronics, Inc. · 2002
- Device and method for depositing one or more layers on a substrate367US 6,849,241 B2Aixtron SE · 2005