Apparatus for producing group-iii nitride semiconductor crystal

An apparatus for producing a Group-III nitride semiconductor crystal, the apparatus comprising:

• a raw material reaction chamber;
• a raw material reactor which is provided in the raw material reaction chamber and generates a Group-III element-containing gas;
• a board-holding member configured to hold a board in the raw material reaction chamber;
• a raw material nozzle configured to spray the Group-III element-containing gas toward the board in the raw material reaction chamber;
• a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board in the raw material reaction chamber, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center;
• a heater for heating the raw material reaction chamber, the raw material nozzle, the nitrogen source nozzle, and the board-holding member in the raw material reaction chamber;
• and
• a rotation mechanism for rotating the board-holding member in the raw material reaction chamber.