Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions

An apparatus for producing a Group-III nitride semiconductor crystal, the apparatus comprising:

• a raw material reaction chamber;
• a raw material reactor which is provided in the raw material reaction chamber and configured to generate a Group-III element-containing gas;
• a board-holding member configured to hold a board in the raw material reaction chamber;
• a raw material nozzle configured to spray the Group-III element-containing gas toward the board in the raw material reaction chamber;
• a first nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board in the raw material reaction chamber;
• a second nitrogen source nozzle configured to spray the nitrogen element-containing gas toward the board in the raw material reaction chamber;
• a heater for heating the raw material reaction chamber, the raw material nozzle, the first nitrogen source nozzle, the second nitrogen source nozzle, and the board-holding member in the raw material reaction chamber;
• and
• a rotation mechanism for rotating the board-holding member in the raw material reaction chamber,
• wherein:
• (i) the first nitrogen source nozzle is configured to spray the nitrogen element-containing gas in a first spray direction which is inclined with respect to a vertical direction and deflected with respect to a horizontal direction and intersects with a vertically downward spray direction of the raw material nozzle at a first intersection underneath the raw material nozzle, and
• (ii) the second nitrogen source nozzle is configured to spray the nitrogen element-containing gas in a second spray direction which is inclined with respect to the vertical direction and deflected with respect to the horizontal direction and intersects with the vertically downward spray direction of the raw material nozzle at a second intersection underneath the raw material nozzle such that a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the first intersection and the second intersection;
• and
• in a side view seen in a direction perpendicular to the vertical direction, an inclination of the first nitrogen source nozzle is opposite to an inclination of the second nitrogen source nozzle.