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US 5,858,086 AGranted
Growth of bulk single crystals of aluminum nitride
OwnerCharles Eric Hunterinventor
Life of this patent
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Abstract
Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.
Claims29
A method of producing bulk single crystals of AlN at enhanced growth rates comprising:
- growing AlN by depositing vapor species containing Al and N on the growth surface of a seed crystal;
- while
- providing effusion of the growing crystal interface sufficient to grow AlN in single crystalline form at a rate greater than 0.5 mm/hour.
A method for commercial production of bulk single crystals of AlN, said method comprising;
- growing AlN by depositing vapor species containing Al and N on the growth surface of a seed crystal;
- while providing effusion of the growing crystal interface at an effusion rate greater than about 2% of the total vapor flow rate.
A method of producing a prepared substrate comprising the steps of:
- growing a bulk single crystal of AlN by depositing vapor species containing Al and N on the growth surface of a seed crystal;
- while
- providing effusion of the growing crystal interface sufficient to grow AlN in single crystalline form at a rate greater than 0.5 mm/hour;
- and thereafter
- cutting a wafer from the bulk single crystal;
- and
- preparing a surface on the wafer receptive to an epitaxial layer;
- and
- depositing an epitaxial layer on the surface.
6 more elements
Dependencies are inferred from the claim text.