Y10S 438/968
Semiconductor-metal-semiconductor
Y10S438/968 (Semiconductor-metal-semiconductor) appears on 14 US grants and 8 published applications in this corpus.
Search patents in Y10S- Granted patents
- 14
- Published applications
- 8
- Assignees
- 9
- Inventors
- 18
- Latest grant
- 9 Mar 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 3 |
| 2003 | 3 | 1 |
| 2004 | 0 | 1 |
| 2005 | 2 | 2 |
| 2006 | 1 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Rare earth metal member and making method9 Mar 2010US 7,674,427 B2Shin-Etsu Chemical Co., Ltd.
- Wafer-level transfer of membranes with gas-phase etching and wet etching methods11 Sep 2007US 7,268,081 B2California Institute of Technology
- Capacitor containing high purity tantalum5 Sep 2006US 7,102,229 B2Honeywell International Inc.
- Tantalum sputtering target and method of manufacture25 Oct 2005US 6,958,257 B2Honeywell International Inc.
- Tantalum sputtering target and method of manufacture18 Oct 2005US 6,955,938 B2Honeywell International Inc.
- Rare earth metal member and making method4 Jan 2007US 2007/0003790 A1Shin-Etsu Chemical Co., Ltd.
- Tantalum sputtering target and method of manufacture29 Dec 2005US 2005/0284259 A1
- Tantalum sputtering target and method of manufacture29 Dec 2005US 2005/0284546 A1Honeywell International Inc.
- Wafer-level transfer of membranes with gas-phase etching and wet etching methods1 Apr 2004US 2004/0063322 A1California Institute of Technology
- Tantalum sputtering target and method of manufacture1 May 2003US 2003/0082864 A1Honeywell International Inc.
Most cited
By later US patents
- Methods for fabricating flexible circuit structures99US 6,391,220 B1Fujitsu Limited · 2002
- Methods for detaching a layer from a substrate84US 6,544,430 B2Fujitsu Limited · 2003
- Methods for fabricating flexible circuit structures64US 6,572,780 B2Fujitsu Limited · 2003
- Method for forming a capacitor with a multiple pillar structure24US 5,821,142 AVanguard International Semiconductor Corporation · 1998
- Tantalum sputtering target and method of manufacture19US 6,323,055 B1The Alta Group, Inc. · 2001