Tantalum sputtering target and method of manufacture
AssigneeHoneywell International Inc.
InventorsHarry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
Life of this patent
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Abstract
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
Claims59
A layer comprising high purity tantalum, less than about 500 ppm, by weight, total metallic impurities, less than 20 ppm, by weight, total of tungsten and molybdenum, and less than 50 ppm, by weight, niobium.
A sputtering target blank comprising tantalum, less than 500 ppm by weight (ppmw) total metallic impurities, less than 5 ppmw total of molybdenum and tungsten, less than about 100 ppmw oxygen, and less than 50 ppmw niobium.
A sputtering target blank comprising tantalum, less than 500 ppmw total metallic impurities, less than 5 ppmw total of molybdenum and tungsten, less than about 100 ppmw oxygen, and less than or equal to 10 ppbw each of uranium and thorium.
A sputtering target blank comprising tantalum, less than 500 ppm by weight (ppmw) total metallic impurities, less than 2 ppmw total of molybdenum and tungsten, and less than 25 ppmw oxygen.
A tantalum sputtering target blank comprising tantalum, and less than 5 ppm by weight (ppmw) molybdenum or tungsten and less than 3 ppmw niobium.
A tantalum sputtering target blank comprising tantalum, less than 5 ppmw each of molybdenum and tungsten, and less than 50 ppmw niobium.
A tantalum sputtering target blank comprising tantalum, and less than 50 ppmw total of molybdenum, tungsten, and niobium.
A tantalum material comprising tantalum, and less than 5 ppmw molybdenum or tungsten and less than 3 ppmw niobium.
A tantalum material comprising tantalum, less than 5 ppmw each of molybdenum and tungsten, and less than 50 ppmw niobium.
A tantalum material comprising tantalum, and less than 50 ppmw total of molybdenum, tungsten, and niobium.
A tantalum material sputtering precursor comprising tantalum, and less than 5 ppmw molybdenum or tungsten and less than 3 ppmw niobium.
A tantalum material sputtering precursor comprising tantalum, less than 5 ppmw each of molybdenum and tungsten, and less than 50 ppmw niobium.
A tantalum material sputtering precursor comprising tantalum, and less than 50 ppmw total of molybdenum, tungsten, and niobium.
Sputtered tantalum materiel comprising tantalum, and less than 5 ppmw molybdenum or tungsten and less than 3 ppmw niobium.
Sputtered tantalum material comprising tantalum, less than less than 5 ppmw each of molybdenum and tungsten, and less than 50 ppmw niobium.
Sputtered tantalum material comprising tantalum, and less than 50 ppmw total of molybdenum, tungsten, and niobium.
Deposited tantalum material comprising tantalum and less than 5 ppmw molybdenum or tungsten and less than 3 ppmw niobium.
Deposited tantalum material comprising tantalum, less than 5 ppmw each of molybdenum and tungsten, and less than 50 ppmw niobium.
Deposited tantalum material comprising tantalum and less than 50 ppmw total of molybdenum, tungsten, and niobium.
An ingot comprising high purity tantalum comprising tantalum, less than about 500 ppm, by weight, total metallic impurities, less than about 50 ppm, by weight, niobium, and less than about 50 ppm, by weight, tungsten or molybdenum.
An ingot comprising tantalum, less than about 500 ppm, by weight, total metallic impurities, and less than 5 ppmw each of molybdenum and tungsten.
A powder comprising high purity tantalum comprising tantalum, less than about 500 ppmw total metallic impurities, less than about 60 ppm, by weight, niobium, and less than about 50 ppmw tungsten or molybdenum.
Dependencies are inferred from the claim text.