Capacitor containing high purity tantalum
AssigneeHoneywell International Inc.
InventorsHarry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
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Abstract
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
Claims15
A capacitor comprising material sputter deposited from a target, the material containing greater than or equal to 99.95 weight percent (wt %) tantalum on a total metals basis, less than 500 parts per million by weight (ppmw) total metallic impurities, less than 50 ppmw tungsten or molybdenum, and less than 10 ppmw niobium.
A capacitor comprising high purity tantalum containing greater than or equal to 99.95 wt % tantalum on a total metals basis, less than 500 ppmw total metallic impurities, and less than 5 ppmw total of tungsten, molybdenum, and niobium.
Dependencies are inferred from the claim text.