Y10S 438/958
Passivation layer
Y10S438/958 (Passivation layer) appears on 352 US grants and 98 published applications in this corpus.
Search patents in Y10S- Granted patents
- 352
- Published applications
- 98
- Assignees
- 136
- Inventors
- 609
- Latest grant
- 22 Jun 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 8 | 0 |
| 1979 | 4 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 11 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 8 | 0 |
| 1988 | 1 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 4 | 0 |
| 1993 | 12 | 0 |
| 1994 | 8 | 0 |
| 1995 | 15 | 0 |
| 1996 | 18 | 0 |
| 1997 | 16 | 0 |
| 1998 | 20 | 0 |
| 1999 | 12 | 0 |
| 2000 | 17 | 0 |
| 2001 | 16 | 0 |
| 2002 | 18 | 13 |
| 2003 | 16 | 7 |
| 2004 | 14 | 16 |
| 2005 | 19 | 9 |
| 2006 | 13 | 16 |
| 2007 | 8 | 3 |
| 2008 | 5 | 5 |
| 2009 | 6 | 4 |
| 2010 | 6 | 4 |
| 2011 | 9 | 4 |
| 2012 | 2 | 1 |
| 2013 | 2 | 3 |
| 2014 | 6 | 3 |
| 2015 | 3 | 3 |
| 2016 | 1 | 2 |
| 2017 | 1 | 1 |
| 2018 | 1 | 1 |
| 2019 | 3 | 2 |
| 2020 | 2 | 1 |
| 2021 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Insulated gate field effect transistor having passivated schottky barriers to the channel22 Jun 2021US 11,043,571 B2Acorn Semi, LLC
- Ionizing radiation blocking in IC chip to reduce soft errors22 Sep 2020US 10,784,200 B2International Business Machines Corporation
- Vertical structure LEDs24 Mar 2020US 10,600,933 B2LG Innotek Co., Ltd.
- Vertical structure LEDs29 Oct 2019US 10,461,217 B2LG Innotek Co., Ltd.
- Vertical structure LEDs22 Oct 2019US 10,453,993 B1LG Innotek Co., Ltd.
- Vertical structure leds2 Jan 2020US 2020/0006593 A1LG Innotek Co., Ltd.
- Vertical structure leds10 Oct 2019US 2019/0312177 A1LG Innotek Co., Ltd.
- Vertical structure leds6 Jun 2019US 2019/0172974 A1LG Innotek Co., Ltd.
- Vertical structure leds7 Jun 2018US 2018/0158986 A1LG Innotek Co., Ltd.
- Insulated gate field effect transistor having passivated schottky barriers to the channel11 May 2017US 2017/0133476 A1Acorn Technologies, Inc.
Most cited
By later US patents
- Method and apparatus for depositing a planarized passivation layer577US 5,908,672 AAPPLIED Materials.Inc. · 1999
- Semiconductor device having a hollow around a gate electrode and a method for producing the same480US 5,559,046 AMatsushita Electronics Corporation · 1996
- Passivated organic device having alternating layers of polymer and dielectric395US 5,757,126 AMotorola, Inc. · 1998
- Passivation of organic devices370US 5,686,360 AMotorola, Inc. · 1997
- Method of fabricating vertical structure LEDs183US 7,928,465 B2LG Electronics Inc. · 2011