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AssigneeAcorn Technologies, Inc.
InventorsDaniel E. Grupp, Daniel J. Connelly
Estimating the term…
A transistor having at least one passivated Schottky barrier to a channel includes an insulated gate structure on a p-type substrate in which the channel is located beneath the insulated gate structure. The channel and the insulated gate structure define a first and second undercut void regions that extend underneath the insulated gate structure toward the channel from a first and a second side of the insulated gate structure, respectively. A passivation layer is included on at least one exposed sidewall surface of the channel and metal source and drain terminals are located on respective first and second sides of the channel, including on the passivation layer and within the undercut void regions beneath the insulated gate structure. At least one of the metal source and drain terminals comprises a metal that has a work function near a valence band of the p-type substrate.
A transistor, comprising at least one electrical junction having a semiconductor contact, a metal contact, and an interface layer disposed between the semiconductor contact and the metal contact, the interface layer comprising a material that passivates the semiconductor contact, wherein the at least one electrical junction has a specific contact resistance of less than or equal to 1000 Ω-μm2.
A method of fabricating an electrical junction in a transistor, comprising forming a source adjacent a semiconductor channel and subsequently forming an interface layer between a surface of the semiconductor channel and a surface of the source, the interface layer comprising at least a monolayer of passivation material, and the source comprising a metal.
Dependencies are inferred from the claim text.