US 7,928,465 B2Granted

Method of fabricating vertical structure LEDs

AssigneeLG Electronics Inc.

InventorsJong-Lam Lee, In-Kwon Jeong, Myung Cheol Yoo

Life of this patent

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Abstract

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Claims43

Dependent claims

A semiconductor light-emitting device, comprising:

a conductive support structure;
a semiconductor structure over the conductive support structure, the semiconductor structure having a first surface and a second surface, wherein the semiconductor structure comprises a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, wherein the second surface is opposite the first surface, and wherein the first surface, relative to the second surface, is proximate to the conductive support structure;
a first electrode electrically connected to the first-type semiconductor layer, wherein the first electrode is arranged between the conductive support structure and the first surface of the semiconductor structure;
a second electrode electrically connected to the second-type semiconductor layer;
and a passivation layer contacting the second surface of the semiconductor structure, the passivation layer having a first length in contact with the first-type semiconductor layer and a second length in contact with the second-type semiconductor layer, wherein the second length is greater than the first length.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/797,335Filed 9 Jun 2010 · continuation
Priority: 9 Apr 2002
Published: US 2010/0308368 A19 Dec 2010
Granted: 19 Apr 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification23 codes

H10H 20/815
Bodies: having stress relaxation structures, e.g. buffer layers
H01C 7/006
Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered…:…
H01C 7/008
Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered…:…
H10D 1/47
Resistors: resistors having no potential barriers

Family

Application10/118,316Parent of this division · filed 9 Apr 2002
Application11/002,413Parent of this continuation · filed 3 Dec 2004
Application12/458,703Parent of this continuation · filed 21 Jul 2009
US 2010/0308368 A1Pre-grant publication · published 9 Dec 2010
US 7,816,705 B2Parent of this continuation
US 7,569,865 B2Parent of this continuation
Application11/002,413Parent of this division
US 2003/0189215 A1Published application
US 2005/0098792 A1Published application
US 2009/0278161 A1Published application
US 7,928,465 B2This patent

From the US filing history. Foreign family members aren’t listed.