Vertical structure LEDs

A method of manufacturing a light emitting device, the method comprising:

• forming an n-type GaN-based layer on a sapphire substrate;
• forming a GaN-based active layer on the n-type GaN-based layer;
• forming a p-type GaN-based layer on the GaN-based active layer;
• forming a p-type electrode on the p-type GaN-based layer;
• forming a metal substrate on the p-type electrode;
• removing the sapphire substrate;
• forming an n-type electrode on the n-type GaN-based layer;
• and
• forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode, after the forming the n-type electrode.

A method of manufacturing a light emitting device, the method comprising:

• forming an n-type GaN-based layer on a sapphire substrate;
• forming a GaN-based active layer on the n-type GaN-based layer;
• forming a p-type GaN-based layer on the GaN-based active layer;
• forming a p-type electrode on the p-type GaN-based layer;
• forming a metal substrate on the p-type electrode;
• removing the sapphire substrate;
• forming an n-type electrode on the n-type GaN-based layer;
• and
• forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, and an upper surface of the n-type GaN-based layer, after the forming the n-type electrode.