Vertical structure leds

A light emitting diode, comprising:

• a metal support layer;
• a GaN-based semiconductor structure on the metal support layer, the GaN-based semiconductor layer comprising:
• a p-type GaN-based semiconductor layer,
• an active layer on the p-type GaN-based semiconductor layer and
• an n-type GaN-based semiconductor layer on the active layer;
• a p-type electrode between the metal support layer and the p-type GaN-based semiconductor layer;
• an n-type electrode on the GaN-based semiconductor structure;
• a metal pad layer on the n-type electrode;
• and
• an insulating layer comprising:
• a first part disposed on an upper surface of the GaN-based semiconductor structure, and
• a second part disposed on a side surface of the GaN-based semiconductor structure,
• wherein the first part of the insulating layer contacts the upper surface of the GaN-based semiconductor structure, a side surface of the n-type electrode and a top surface of the n-type electrode,
• wherein the n-type electrode overlaps at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure,
• wherein the p-type electrode contacts a top surface of the metal support layer and a bottom surface of the GaN-based semiconductor structure,
• wherein the upper surface of the GaN-based semiconductor structure has a flat top portion contacting the n-type electrode,
• wherein an area of a portion contacting the p-type GaN-based semiconductor layer in the insulating layer is smaller than an area of a portion contacting the n-type GaN-based semiconductor layer in the insulating layer,
• wherein the first part of the insulating layer is patterned to form an open space exposing the n-type electrode,
• wherein the metal pad layer is disposed at the open space,
• wherein the metal pad layer comprises:
• a first portion having a flat bottom surface on the n-type electrode and
• a second portion having stepped surfaces,
• wherein a first width of the first portion of the metal pad layer is different than a second width of the second portion of the metal pad layer,
• wherein the second portion of the metal pad layer overlaps the first portion of the metal pad layer in the thickness direction of the GaN-based semiconductor structure, and
• wherein a thickness of the GaN-based semiconductor structure is less than 5 μm.

A light emitting diode, comprising:

• a metal support layer comprising Ti and a non-metal material;
• a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor layer comprising:
• a p-type GaN-based semiconductor layer,
• an active layer on the p-type GaN-based semiconductor layer and
• an n-type GaN-based semiconductor layer on the active layer;
• a p-type electrode between the metal support layer and the p-type GaN-based semiconductor layer, wherein the p-type electrode includes a plurality of metal layers;
• an n-type electrode on the GaN-based semiconductor structure;
• a metal pad layer on the n-type electrode;
• and
• an insulating layer including at least one of SiO2 or Si3N4, the insulating layer comprising:
• a first part disposed on an upper surface of the GaN-based semiconductor structure, and
• a second part disposed on an entire side surface of the GaN-based semiconductor structure,
• wherein the first part of the insulating layer contacts the upper surface of the GaN-based semiconductor structure,
• wherein the n-type electrode overlaps at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure,
• wherein the p-type electrode contacts a top surface of the metal support layer and a bottom surface of the GaN-based semiconductor structure,
• wherein the first part of the insulating layer is patterned to form an open space exposing the n-type electrode,
• wherein the metal pad layer is disposed at the open space and an uppermost surface of the metal pad layer is disposed at a higher position than the first part of the insulating layer,
• wherein the second part of the insulating layer is separated from the n-type electrode, and
• wherein the n-type electrode comprises Ti and Al.