Vertical structure LEDs

A light-emitting device, comprising:

• a conductive support structure comprising a metal;
• a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, wherein the GaN-based semiconductor structure has a first surface, a side surface and a second surface, wherein the first surface, relative to the second surface, is proximate to the conductive support structure, wherein the second surface is opposite to the first surface, wherein the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and wherein the conductive support structure is thicker than the n-type GaN-based semiconductor layer;
• a p-type electrode disposed on the conductive support structure;
• an n-type electrode disposed on the second surface of the GaN-based semiconductor structure;
• and
• a passivation layer disposed on the side surface and the second surface of the GaN-based semiconductor structure,
• wherein the passivation layer comprises:
• a first portion disposed on the second surface of the GaN-based semiconductor structure;
• and
• a second portion disposed between the conductive support structure and the first surface of the GaN-based semiconductor structure,
• wherein the first portion is overlapped with the second portion in a thickness direction of the GaN-based semiconductor structure, and
• wherein the first portion has a width greater than a width of the second portion.