Y10S 438/939
Langmuir-blodgett film utilization
Y10S438/939 (Langmuir-blodgett film utilization) appears on 25 US grants and 10 published applications in this corpus.
Search patents in Y10S- Granted patents
- 25
- Published applications
- 10
- Assignees
- 12
- Inventors
- 45
- Latest grant
- 29 Dec 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 2 |
| 2003 | 2 | 3 |
| 2004 | 2 | 1 |
| 2005 | 1 | 0 |
| 2006 | 2 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 1 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 1 |
| 2020 | 1 | 0 |
| 2021 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method and apparatus for producing large-area monolayer films of solution dispersed nanomaterials29 Dec 2020US 10,875,052 B2
- Organic thin film transistor substrate and fabrication method therefor3 Jul 2012US 8,211,757 B2Samsung Electronics Co., Ltd.
- Organic thin-film transistor substrate and fabrication method therefor28 Sep 2010US 7,803,669 B2Samsung Electronics Co., Ltd.
- Reliable adhesion layer interface structure for polymer memory electrode and method of making same18 Jul 2006US 7,078,240 B2Intel Corporation
- Two-dimensionally arrayed quantum device21 Mar 2006US 7,015,139 B2Matsushita Electric Industrial Co., Ltd.
- Method for producing large-area monolayer films of solution dispersed nanomaterials4 Mar 2021US 2021/0060603 A1
- Method and apparatus for producing large-area monolayer films of solution dispersed nanomaterials5 Sep 2019US 2019/0270113 A1
- Organic thin film transistor substrate and fabrication method therefor3 Mar 2011US 2011/0053315 A1Samsung Electronics Co., Ltd.
- Organic thin film transistor substrate and fabrication method therefor3 Jan 2008US 2008/0001142 A1Samsung Electronics Co., Ltd.
- Reliable adhesion layer interface structure for polymer memory electrode and method of making same5 Aug 2004US 2004/0152231 A1Intel Corporation
Most cited
By later US patents
- Method for forming a pattern and forming a thin film used in pattern formation196US 5,512,328 AHitachi, Ltd. · 1996
- Method for forming a dielectric thin film or its pattern of high accuracy on a substrate65US 5,185,296 AMatsushita Electric Industrial Co., Ltd. · 1993
- Method for forming a dielectric thin film or its pattern of high accuracy on substrate55US 5,304,515 AMatsushita Electric Industrial Co., Ltd. · 1994
- Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof44US 5,962,079 AUniversity of Connecticut · 1999
- Fabrication of two-dimensionally arrayed quantum device35US 6,121,075 AMatsushita Electric Industrial Co., Ltd. · 2000