Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKiyoyuki Morita, Takeshi Ishihara
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Abstract
A method and apparatus for forming a dielectric thin film or pattern thereof is provided in which a positive or negative resist of a desired pattern if formed on various substrates including a semiconductor substrate by contact of the resist with a liquefied gas or super critical fluid of CO.sub.2, NH.sub.3 or the like. Alternatively, a thin film of an organic or inorganic compound dissolved or dispersed in an organic solvent which has been formed on substrate becomes substantially free of any organic matter or functional groups by contact with the liquefied gas or super critical fluid. Semiconductor devices of high performance and high reliability are ensured.
Claims8
A method for forming a dielectric film of a desired pattern with a high dimensional accuracy, the method comprising:
- providing a substrate with or without a desired circuit pattern on one side thereof;
- forming on the one side of the substrate a thin film of a radiation sensitive organic material whose molecular weight is changed by irradiation of a radiation;
- irradiating the thin film with a radiation in a desired pattern;
- and
- contacting the substrate with a super critical fluid or liquified gas to dissolve and thereby remove regions of the thin film which are made of a material having a lower molecular, while retaining a dielectric film of a desired pattern of the radiation sensitive organic material with a higher molecular weight.
Dependencies are inferred from the claim text.