Reliable adhesion layer interface structure for polymer memory electrode and method of making same
AssigneeIntel Corporation
InventorsJian Li, Xiao-Chun Mu
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Abstract
A polymer memory device include two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions. A memory system allows the polymer memory device to interface with various existing hosts.
Claims29
A polymer memory device comprising:
- a first electrode disposed on a substrate;
- a first organic adhesion layer disposed over the substrate and over the first electrode;
- a ferroelectric polymer structure disposed above and on the first organic adhesion layer;
- a second organic adhesion layer disposed above and on the ferroelectric polymer structure;
- and
- a second electrode disposed over the second organic adhesion layer.
A cross-point matrix polymer memory structure comprising:
- a first aluminum or copper electrode disposed on a substrate;
- a first refractory metal nitride or oxide protective film disposed above and on the first electrode;
- a first organic adhesion layer disposed above and on the first refractory metal nitride or oxide protective film;
- a ferroelectric polymer structure disposed over the substrate and the first protective film;
- a second organic adhesion layer disposed above and on the ferroelectric polymer structure;
- a second refractory metal nitride or oxide protective film disposed over the ferroelectric polymer structure;
- and
- a second aluminum or copper electrode disposed above and on the second refractory metal nitride protective film.
A process of making a storage device comprising:
- forming a first electrode on a substrate;
- forming a first organic adhesion layer over the substrate and over the first electrode;
- forming a ferroelectric polymer structure over the first organic adhesion layer;
- forming a second organic adhesion layer above and on the ferroelectric polymer structure;
- and
- forming a second electrode above the second organic adhesion layer.
A memory system comprising:
- a substrate disposed on a physical interface for a host;
- a memory article disposed on the substrate, the memory article comprising:
- a first electrode disposed on a substrate;
- a first organic adhesion layer disposed over the first electrode;
- a ferroelectric polymer structure disposed over the first organic adhesion layer;
- a second organic adhesion layer disposed over the ferroelectric polymer structure;
- and
- a second electrode disposed above and on the second organic adhesion layer;
- a signal interface for communication from the memory article to the host;
- and
- a host.
Dependencies are inferred from the claim text.