Method for forming a pattern and forming a thin film used in pattern formation
AssigneeHitachi, Ltd.
InventorsToshiyuki Yoshimura, Naoko Miura, Shinji Okazaki, Minoru Toriumi, Hiroshi Shiraishi
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Abstract
In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.
Claims22
A pattern formation method comprising the steps of:
- forming a pattern of a thin film of a seed material coated on a surface of a substrate, wherein a surface hydrophilicity characteristic of said seed material differs from a hydrophilicity characteristic of said substrate surface;
- depositing an oriented material film on one of said seed material or said substrate surface;
- and
- wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.
A method of forming a pattern used in semiconductor lithography, comprising the steps of:
- coating a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material;
- removing portions of said seed material thereby forming removed and non-removed portions of said seed material;
- depositing an oriented material on one of said removed and non-removed portions according to said different hydrophilicity characteristics, wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.
A pattern formation method used in semiconductor lithography, comprising the steps of:
- coating a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material;
- forming a pattern by removing portions of said seed material thereby forming removed and non-removed portions of said seed material;
- depositing an oriented material film on one of said removed and non-removed portions according to said different hydrophilicity characteristics;
- wherein said oriented material is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.
A method of forming a pattern used in semiconductor lithography, comprising the steps of:
- forming a pattern on a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material, said seed material being deposited on said substrate by applying energy beams in a vaccum to the substrate surface in the presence of a material that is decomposed by the energy beams and that deposits on the substrate to form the pattern;
- depositing on oriented material on one of said substrate and said seed material, wherein said oriented material is one of a normal chain fatty acid, a polymer material silver chloride, sodium chloride, silver selenide, selenium, tellurium and a liquid crystal.
A pattern formation method used in semiconductor lithography, comprising the steps of:
- forming a pattern on a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material, said seed material being deposited on said substrate by applying energy beams in a vacuum to the substrate surface in the presence of a material that is decomposed by the energy beams and that deposits on the substrate to form the pattern;
- depositing an oriented material on one of said substrate and said seed material;
- wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.
Dependencies are inferred from the claim text.