Method for forming a dielectric thin film or its pattern of high accuracy on substrate
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKiyoyuki Morita, Takeshi Ishihara
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Abstract
A method and apparatus for forming a dielectric thin film or pattern thereof is provided in which a positive or negative resist of a desired pattern is formed on various substrates including a semiconductor substrate by contact of the resist with a liquefied gas or super critical fluid of CO.sub.2, NH.sub.3 or the like. Alternatively, a thin film of an organic or inorganic compound dissolved or dispersed in an organic solvent which has been formed on substrate becomes substantially free of any organic matter or functional groups by contact with the liquefied gas or super critical fluid. Semiconductor devices of high performance and high reliability are ensured.
Claims14
A method for forming a dielectric thin film which comprises:
- providing a substrate;
- forming on one side of the substrate a thin film of a dielectric inorganic material obtained from an organic material, said thin film of a dielectric inorganic material containing an organic component selected from the group consisting of organic matter, organic functional groups, and mixtures thereof;
- and
- contacting the substrate with a super critical fluid or liquefied gas to remove the organic component from the film, thereby obtaining a dielectric thin film.
A method for forming a dielectric thin film which comprises:
- providing a substrate;
- forming on one side of the substrate a thin film of a compound capable of conversion into a dielectric inorganic material by thermal treatment, said thin film containing an organic component selected from the group consisting of organic matter, organic functional groups and mixtures thereof;
- contacting the substrate with a super critical fluid or liquefied gas to remove the organic component from the film;
- and
- heating the substrate at temperatures sufficient to convert the compound into the dielectric inorganic material, thereby forming a dielectric thin film on the substrate.
Dependencies are inferred from the claim text.