Organic thin film transistor substrate and fabrication method therefor
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Cho, Bo Kim, Keun Song
Life of this patent
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Abstract
An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
Claims15
A thin film transistor substrate, comprising:
- a gate line formed on a substrate;
- a data line intersecting with the gate line;
- an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes;
- a passivation layer substantially parallel with the gate line, for covering the organic semiconductor layer;
- and
- a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
A method of fabricating a thin film transistor substrate, comprising:
- forming a gate line and a gate electrode connected to the gate line on a substrate;
- forming a bank insulating layer exposing the gate electrode;
- forming an organic gate insulating layer to cover the exposed gate electrode within the bank insulating layer;
- forming on the bank insulating layer a data line intersecting with the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and a pixel electrode connected to the drain electrode;
- forming an organic semiconductor layer forming a channel between the source and drain electrodes within the bank insulating layer;
- and
- forming a passivation layer to cover the organic semiconductor layer of the organic semiconductor layer within the bank insulating layer.
Dependencies are inferred from the claim text.