Y10S 438/934
Sheet resistance, i.e. dopant parameters
Y10S438/934 (Sheet resistance, i.e. dopant parameters) appears on 66 US grants and 2 published applications in this corpus.
Search patents in Y10S- Granted patents
- 66
- Published applications
- 2
- Assignees
- 45
- Inventors
- 137
- Latest grant
- 28 Mar 2006
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 5 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 4 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 8 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 6 | 0 |
| 1997 | 7 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Calibration standards for dopants/impurities in silicon and preparation method28 Mar 2006US 7,018,856 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Monitoring process for oxide removal17 Jun 2003US 6,579,730 B2APPLIED Materials.Inc.
- Deposition of tungsten films from W(CO)617 Apr 2001US 6,218,301 B1APPLIED Materials.Inc.
- Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact9 Jan 2001US 6,172,420 B2Motorola, Inc.
- Ohmic contact and method of manufacture28 Mar 2000US 6,043,143 AMotorola, Inc.
Most cited
By later US patents
- Method for manufacturing a semiconductor device113US 4,309,224 ATokyo Shibaura Denki Kabushiki Kaisha · 1982
- Process for improving sheet resistance of an integrated circuit device gate102US 5,268,330 AInternational Business Machines Corporation · 1993
- Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient71US 5,489,547 ATexas Instruments Incorporated · 1996
- Method of producing low-resistance diffused regions in IC MOS semiconductor circuits in silicon-gate technology metal silicide layer formation63US 4,356,622 ASiemens Aktiengesellschaft · 1982
- Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation57US 4,339,285 ARCA Corporation · 1982