Deposition of tungsten films from W(CO)6
AssigneeApplied Materials, Inc.
InventorsHyungsuk Alexander Yoon, Michael X. Yang, Ming Xi
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Abstract
A method of forming tungsten films on oxide layers is disclosed. The tungsten films are formed on the oxide layers by treating the oxide using a silane based gas mixture followed by the thermal decomposition of a W(CO)6 precursor. After the W(CO)6 precursor is thermally decomposed, additional layer of tungsten may be optionally formed thereon from the thermal decomposition of tungsten hexafluoride (WF6).
Claims72
A method of thin film deposition for integrated circuit fabrication, comprising the steps of:
- (a) treating a substrate with a dielectric material thereon using a gas mixture comprising a silicon compound;
- and
- (b) forming one or more tungsten (W) films on the substrate.
A method of forming a device, comprising:
- (a) providing a substrate having a dielectric layer thereon, wherein the dielectric layer has vias therein;
- (b) treating the dielectric layer using a gas mixture comprising a silicon compound;
- and
- (c) forming one or more tungsten (W) films on the dielectric layer;
- and
- (d) filling the vias with a conductive material.
A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a layer deposition method, comprising:
- (a) treating a substrate with a dielectric material thereon using a gas mixture comprising a silicon compound;
- and
- (b) forming one or more tungsten (W) films on the substrate.
Dependencies are inferred from the claim text.