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US 6,172,420 B2Granted
Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact
AssigneeMotorola, Inc.
InventorKumar Shiralagi
Life of this patent
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Abstract
An ohmic contact including a gallium arsenide substrate having an epitaxially grown crystalline layer of indium arsenide on the substrate. The crystalline material and the substrate define an interface, layers are n-doped with silicon close to the interface.
Claims15
An ohmic contact, comprising:
- a gallium arsenide substrate;
- an epitaxially grown crystalline layer of indium arsenide on the substrate, the crystalline material and the substrate defining an interface;
- and
- a plurality of doped layers being n-doped with silicon close to the interface, wherein the contact is substantially free of compositionally graded InGaAs.
1 more element
An ohmic contact, comprising:
- a gallium arsenide substrate;
- an epitaxially grown crystalline layer of indium arsenide on the substrate, the crystalline material and the substrate defining an interface;
- and
- a plurality of delta doped layers being n-doped with silicon close to the interface;
- and wherein said ohmic contact exhibits contact resistance of 3-4 E-7 ohm-cm2.
2 more elements
An ohmic contact, comprising:
- a gallium arsenide substrate;
- an epitaxially grown crystalline layer of indium arsenide on the substrate, the crystalline material and the substrate defining an interface;
- and
- a plurality of delta doped layers being n-doped with silicon close to the interface,
- wherein the closest of said delta doped layers are approximately 20 to 30 angstroms from the interface;
- wherein the contact is substantially free of compositionally graded InGaAs;
- wherein said ohmic contact exhibits contact resistance of 3-4 E-7 ohm-cm2;
- wherein current conduction is permitted from the InAs layer to the GaAs layer and from the GaAs layer to the InAs layer, and wherein said InAs layer is capable of functioning as both a source and a drain region for a field effect transistor device.
5 more elements
Dependencies are inferred from the claim text.