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US 6,043,143 AGranted
Ohmic contact and method of manufacture
AssigneeMotorola, Inc.
InventorKumar Shiralagi
Life of this patent
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Abstract
A method of improving contact resistance in a multi-layer heterostructure comprising the steps of providing a substrate, growing a crystalline material on the substrate, and doping close to an interface of the substrate and the crystalline material with n-silicon to provide continuity at the interface.
Claims14
A method of improving contact resistance in a multi-layer heterostructure, the method comprising the steps of:
- providing a substrate;
- growing a crystalline material on the substrate;
- and doping close to an interface of the substrate and the crystalline material with n-silicon to provide substantial continuity at the interface.
A method of fabricating an ohmic contact, the method comprising the steps of:
- providing a substrate;
- defining an interface on a surface of the substrate;
- selectively growing a crystalline material on the interface;
- and
- doping close to the interface with n-silicon.
2 more elements
Dependencies are inferred from the claim text.