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US 4,339,285 AGranted
Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation
AssigneeRCA Corporation
InventorJacques I. Pankove
Life of this patent
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Abstract
A method for fabricating adjacent electrically conducting and insulating regions in a silicon film is described. A substantially insulating layer of oxygenated, N or P doped, non-single crystalline silicon film is first formed. The film is then selectively laser irradiated so as to form an irradiated portion which is substantially conducting.
Claims11
A method for fabricating adjacent electrically conducting and insulating regions in a silicon film, comprising:
- forming a layer of oxygenated, doped, non-single crystalline silicon film, said film being substantially insulating;
- and
- selectively laser irradiating said film so as to form an irradiated portion which is substantially conducting.
Dependencies are inferred from the claim text.