Y10S 438/904
Charge carrier lifetime control
Y10S438/904 (Charge carrier lifetime control) appears on 85 US grants and 13 published applications in this corpus.
Search patents in Y10S- Granted patents
- 85
- Published applications
- 13
- Assignees
- 36
- Inventors
- 124
- Latest grant
- 19 May 2009
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 5 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 0 |
| 2002 | 4 | 6 |
| 2003 | 2 | 2 |
| 2004 | 10 | 2 |
| 2005 | 2 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 0 | 0 |
| 2009 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- High voltage non punch through IGBT for switch mode power supplies19 May 2009US 7,534,666 B2International Rectifier Corporation
- Method to manufacture high-precision RFID straps and RFID antennas using a laser31 Mar 2009US 7,510,985 B1Lpkf Laser & Electronics AG
- Laser annealing method and manufacturing method of a semiconductor device6 Jan 2009US 7,473,622 B2Semiconductor Energy Laboratory Co.Ltd.
- Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device20 Feb 2007US 7,179,698 B2Semiconductor Energy Laboratory Co., Ltd.
- Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device13 Dec 2005US 6,974,731 B2Semiconductor Energy Laboratory Co.Ltd.
- Laser apparatus, laser annealing method, and manufacture method of a semiconductor device28 Jun 2007US 2007/0148925 A1Semiconductor Energy Laboratory Co.Ltd.
- High voltage non punch through IGBT for switch mode power supplies1 Feb 2007US 2007/0026577 A1International Rectifier Corporation
- Semiconductor device and method of manufacturing the same20 Jan 2005US 2005/0012088 A1Kabushiki Kaisha Toshiba
- Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device11 Nov 2004US 2004/0224449 A1Semiconductor Energy Laboratory Co.Ltd.
- Methods for reducing contamination of semiconductor substrates15 Jul 2004US 2004/0137741 A1Lam Research Corporation
Most cited
By later US patents
- Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device110US 6,974,731 B2Semiconductor Energy Laboratory Co.Ltd. · 2005
- Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device82US 6,730,550 B1Semiconductor Energy Laboratory Co.Ltd. · 2004
- Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device75US 6,753,212 B2Semiconductor Energy Laboratory Co.Ltd. · 2004
- Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process65US 5,240,876 AHarris Corporation · 1993
- Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer62US 5,856,237 AIndustrial Technology Research Institute · 1999