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US 6,730,550 B1Granted
Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Koichiro Tanaka, Kenji Kasahara, Ritsuko Kawasaki
Life of this patent
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Abstract
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
Claims60
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- irradiating the front side of the semiconductor film with first laser light and irradiating the back side of the semiconductor film with second laser light;
- and
- forming a TFT that has as an active layer the semiconductor film irradiated with the first laser light and the second laser light,
- wherein the first laser light and the second laser light are generated from the same solid state laser selected from the group consisting of a YAG laser, a YVO4 laser, and a YAIO3 laser, and
- wherein a wavelength of the first laser light is different from that of the second laser light.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the front side of the island-like semiconductor film with first laser light and irradiating the back side of the island-like semiconductor film with second laser light;
- and
- forming a TFT that has as an active layer the island-like semiconductor film irradiated with the first laser light and the second laser light,
- wherein the first laser light and the second laser light are generated from the same solid state laser selected from the group consisting of a YAG laser, a YVO4 laser, and a YAIO3 laser, and
- wherein a wavelength of the first laser light is different from that of the second laser light.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- irradiating the front side of the semiconductor film with first laser light and irradiating the back side of the semiconductor film with second laser light;
- patterning the semiconductor film irradiated with the first laser light and the second laser light to form an island-like semiconductor film;
- forming a TFT that has as an active layer the island-like semiconductor film,
- wherein the first laser light and the second laser light are generated from the same solid state laser selected from the group consisting of a YAG laser, a YVO4 laser, and a YAIO3 laser, and
- wherein a wavelength of the first laser light is different from that of the second laser light.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- irradiating the front side of the semiconductor film with fourth harmonic generated and emitted from a solid state laser as a source, and irradiating the back side of the semiconductor film with third harmonic generated and emitted from the solid state laser as a source;
- and
- forming a TFT that has as an active layer the semiconductor film which has been irradiated with the third harmonic and the fourth harmonic.
1 more element
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the front side of the island-like semiconductor film with fourth harmonic generated and emitted from a solid state laser as a source, and irradiating the back side of the island-like semiconductor film with third harmonic generated and emitted from the solid state laser as a source;
- and
- forming a TFT that has as an active layer the island-like semiconductor film which has been irradiated with the third harmonic and the fourth harmonic.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- irradiating a front side of the semiconductor film with a first linear laser light and irradiating a back side of the semiconductor film with a second linear laser light;
- and
- forming a TFT comprising as an active layer the semiconductor film irradiated with the first linear laser light and the second linear laser light,
- wherein the first linear laser light and the second linear laser light are generated from an Nd:YVO4 laser, and
- wherein a wavelength of the first linear laser light is different from that of the second linear laser light.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating a front side of the island-like semiconductor film with a first linear laser light and irradiating a back side of the island-like semiconductor film with a second linear laser light;
- and
- forming a TFT comprising as an active layer the island-like semiconductor film irradiated with the first linear laser light and the second linear laser light,
- wherein the first linear laser light and the second linear laser light are generated from an Nd:YVO4 laser, and
- wherein a wavelength of the first linear laser light is different from that of the second linear laser light.
4 more elements
A method of manufacturing a semiconductor device comprising steps of:
- forming a semiconductor film on an insulating surface;
- irradiating a front side of the semiconductor film with a first linear laser light and irradiating a back side of the semiconductor film with a second linear laser light;
- and
- patterning the semiconductor film irradiated with the first linear laser light and the second linear laser light to form an island-like semiconductor film;
- forming a TFT comprising as an active layer the island-like semiconductor film,
- wherein the first linear laser light and the second linear laser light are generated from an Nd:YVO4 laser, and
- wherein a wavelength of the first linear laser light is different from that of the second linear laser light.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- irradiating a front side of the semiconductor film with a first linear laser light and irradiating a back side of the semiconductor film with a second linear laser light;
- and
- forming a TFT comprising as an active layer the semiconductor film irradiated with the first linear laser light and the second linear laser light,
- wherein the first linear laser light and the second linear laser light are generated from a continuous Nd:YVO4 laser, and
- wherein a wavelength of the first linear laser light is different from that of the second linear laser light.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- patterning the semiconductor film on an island-like semiconductor film;
- irradiating a front side of the island like semiconductor film with a first linear laser light and irradiating a back side of the island-like semiconductor film with a second linear laser light;
- and
- forming a TFT comprising as an active layer the island-like semiconductor film irradiated with the first linear laser light and the second linear laser light,
- wherein the first linear laser light and the second linear laser light are generated from a continuous Nd:YVO4 laser, and
- wherein a wavelength of the first linear laser light is different from that of the second linear laser light.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- irradiating a front side of the semiconductor film with a first linear laser light and irradiating a back side of the semiconductor film with a second linear laser light;
- and
- patterning the semiconductor film irradiated with the first linear laser light and the second linear laser light to form an island-like semiconductor film;
- forming a TFT comprising as an active layer the island-like semiconductor film,
- wherein the first linear laser light and the second linear laser light are generated from a continuous Nd:YVO4 laser, and
- wherein a wavelength of the first linear laser light is different from that of the second linear laser light.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate having an insulating surface;
- irradiating a front side of the semiconductor film with first laser light and irradiating a back side of the semiconductor film with second laser light;
- and
- forming a TFT comprising as an active layer the semiconductor film irradiated with the first laser light and the second laser light,
- wherein the first laser light and the second laser light are generated from an Nd:YVO4 laser,
- wherein a wavelength of the first laser light is different from that of the second laser light, and
- wherein the substrate transmits the second laser light while the substrate does not transmit the first laser light.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate having an insulating surface;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating a front side of the island-like semiconductor film with first laser light and irradiating a back side of the island-like semiconductor film with second laser light;
- and
- forming a TFT comprising as an active layer the island-like semiconductor film irradiated with the first laser light and second laser light,
- wherein the first laser light and the second laser light are generated from an Nd:YVO4 laser,
- wherein a wavelength of the first laser light is different from that of the second laser light, and
- wherein the substrate transmits the second laser light while the substrate does not transmit the first laser light.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate having an insulating surface;
- irradiating a front side of the semiconductor film with first laser light and irradiating a back side of the semiconductor film with second laser light;
- and
- patterning the semiconductor film irradiated with the first laser light and the second laser light to form an island-like semiconductor film;
- forming a TFT comprising as an active layer the island-like semiconductor film,
- wherein the first laser light and the second laser light are generated from an Nd:YVO4 laser,
- wherein a wavelength of the first laser light is different from that of the second laser light, and
- wherein the substrate transmits the second laser light while the substrate does not transmit the first laser light.
5 more elements
Dependencies are inferred from the claim text.