Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Koichiro Tanaka, Kenji Kasahara, Ritsuko Kawasaki
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Abstract
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
Claims45
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- crystallizing the semiconductor film by irradiation of the second harmonic of a YVO4 laser;
- and
- patterning the crystallized semiconductor film to form a semiconductor island.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- crystallizing the semiconductor film by irradiation of the second harmonic of a YVO4 laser having a linear shape;
- and
- patterning the crystallized semiconductor film to form a semiconductor island.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- patterning the semiconductor film to form a semiconductor island;
- and
- crystallizing the semiconductor island by irradiation of the second harmonic of a YVO4 laser.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- patterning the semiconductor film to form a semiconductor island;
- and
- crystallizing the semiconductor island by irradiation of the second harmonic of a YVO4 laser having a linear shape.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- crystallizing the semiconductor film by irradiation of the second harmonic of a YVO4 laser;
- and
- patterning the crystallized semiconductor film to form a semiconductor island,
- wherein the second harmonic of the YVO4 laser has a shape at an irradiation surface which has aspect ratio of 10 or more.
A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film;
- crystallizing the semiconductor film by irradiation of the second harmonic of a YVO4 laser;
- and
- patterning the crystallized semiconductor film to form a semiconductor island,
- wherein the insulating film comprises at least one material selected from the group consisting of silicon oxide, silicon oxynitride and silicon nitride.
Dependencies are inferred from the claim text.