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US 6,974,731 B2Granted
Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Koichiro Tanaka, Kenji Kasahara, Ritsuko Kawasaki
Life of this patent
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Abstract
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
Claims109
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein an irradiation area of the continuous wave laser beam at the semiconductor film has an oval shape having an aspect ratio of 10 or more, and
- wherein the continuous wave laser beam is a second harmonic of a solid laser.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein the continuous wave laser beam is a second harmonic of a solid laser.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a plastic substrate;
- forming a semiconductor film on the insulating film;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein an irradiation area of the continuous wave laser beam at the semiconductor film has an oval shape having an aspect ratio of 10 or more, and
- wherein the continuous wave laser beam is a second harmonic of a solid laser.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the semiconductor film;
- and
- irradiating the source region and the drain region with a linear laser beam of excimer laser,
- wherein the continuous wave laser beam is a second harmonic of a solid laser.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a second harmonic of a solid laser.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the island-like semiconductor film with a continuous wave laser beam to crystallize the island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a second harmonic of a solid laser.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein the continuous wave laser beam is a second harmonic of a laser comprising Nd.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the semiconductor film;
- and
- irradiating the source region and the drain region with a linear laser beam of excimer laser,
- wherein the continuous wave laser beam is a second harmonic of a laser comprising Nd.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a second harmonic of a laser comprising Nd.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the island-like semiconductor film with a continuous wave laser beam to crystallize the island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a second harmonic of a laser comprising Nd.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein an irradiation area of the continuous wave laser beam at the semiconductor film has an oval shape having an aspect ratio of 10 or more, and
- wherein the continuous wave laser beam is a third harmonic of a solid laser.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein the continuous wave laser beam is a third harmonic of a solid laser.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a plastic substrate;
- forming a semiconductor film on the insulating film;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein an irradiation area of the continuous wave laser beam at the semiconductor film has an oval shape having an aspect ratio of 10 or more, and
- wherein the continuous wave laser beam is a third harmonic of a solid laser.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the semiconductor film;
- and
- irradiating the source region and the drain region with a linear laser beam of excimer laser,
- wherein the continuous wave laser beam is a third harmonic of a solid laser.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a third harmonic of a solid laser.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the island-like semiconductor film with a continuous wave laser beam to crystallize the island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and wherein the continuous wave laser beam is a third harmonic of a solid laser.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein the continuous wave laser beam is a third harmonic of a laser comprising Nd.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the semiconductor film;
- and
- irradiating the source region and the drain region with a linear laser beam of excimer laser,
- wherein the continuous wave laser beam is a third harmonic of a laser comprising Nd.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a third harmonic of a laser comprising Nd.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the island-like semiconductor film with a continuous wave laser beam to crystallize the island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a third harmonic of a laser comprising Nd.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein an irradiation area of the continuous wave laser beam at the semiconductor film has an oval shape having an aspect ratio of 10 or more, and
- wherein the continuous wave laser beam is a fourth harmonic of a solid laser.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein the continuous wave laser beam is a fourth harmonic of a solid laser.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a plastic substrate;
- forming a semiconductor film on the insulating film;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein an irradiation area of the continuous wave laser beam at the semiconductor film has an oval shape having an aspect ratio of 10 or more, and
- wherein the continuous wave laser beam is a fourth harmonic of a solid laser.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the semiconductor film;
- and
- irradiating the source region and the drain region with a linear laser beam of excimer laser,
- wherein the continuous wave laser beam is a fourth harmonic of a solid laser.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a fourth harmonic of a solid laser.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the island-like semiconductor film with a continuous wave laser beam to crystallize the island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a fourth harmonic of a solid laser.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- and
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film,
- wherein the continuous wave laser beam is a fourth harmonic of a laser comprising Nd.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the semiconductor film;
- and
- irradiating the source region and the drain region with a linear laser beam of excimer laser,
- wherein the continuous wave laser beam is a fourth harmonic of a laser comprising Nd.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- irradiating the semiconductor film with a continuous wave laser beam to crystallize the semiconductor film;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a fourth harmonic of a laser comprising Nd.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film successively without exposing the insulating film to the air;
- patterning the semiconductor film to form an island-like semiconductor film;
- irradiating the island-like semiconductor film with a continuous wave laser beam to crystallize the island-like semiconductor film;
- forming a source region, a drain region, an LDD region, and a channel region in the crystallized island-like semiconductor film;
- and
- wherein the LDD region comprises a first portion which is overlapped with a gate electrode and a second portion which is not overlapped with the gate electrode, and
- wherein the continuous wave laser beam is a fourth harmonic of a laser comprising Nd.
5 more elements
Dependencies are inferred from the claim text.