Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Koichiro Tanaka, Kenji Kasahara, Ritsuko Kawasaki
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Abstract
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
Claims36
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- crystallizing the semiconductor film by irradiation of a harmonic of a YVO4 laser;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- crystallizing the semiconductor film by irradiation of a continuous wave YVO4 laser;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- crystallizing the semiconductor film by irradiation of linear laser light of a YVO4 laser;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- crystallizing the semiconductor film by irradiation of a harmonic of a continuous wave YVO4 laser;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- patterning the semiconductor film to form an island-like semiconductor film;
- crystallizing the island-like semiconductor film by irradiation of a harmonic of a YVO4 laser;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- patterning the semiconductor film to form an island-like semiconductor film;
- crystallizing the island-like semiconductor film by irradiation of a continuous wave YVO4 laser;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- patterning the semiconductor film to form an island-like semiconductor film;
- crystallizing the island-like semiconductor film by irradiation of linear laser light of a YVO4 laser;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- patterning the semiconductor film to form an island-like semiconductor film;
- crystallizing the island-like semiconductor film by irradiation of a harmonic of a continuous wave YVO4 laser;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- crystallizing the semiconductor film by irradiation of a harmonic of a YVO4 laser;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film,
- wherein the harmonic of the YVO4 laser has a shape at an irradiation surface which has an aspect ratio of 10 or more.
A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
- forming a semiconductor film on the insulating film;
- crystallizing the semiconductor film by irradiation of a harmonic of a YVO4 laser;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film,
- wherein the insulating film comprises at least one material selected from the group consisting of silicon oxide, silicon oxynitride and silicon nitride.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- providing a crystallization promoting material with the semiconductor film;
- crystallizing the semiconductor film by irradiation of a harmonic of a YVO4 laser;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
- crystallizing the semiconductor film by irradiation of a harmonic of a solid laser comprising Nd;
- patterning the crystallized semiconductor film to form a crystallized island-like semiconductor film;
- and
- forming at least a channel region of a thin film transistor in the crystallized island-like semiconductor film,
- wherein the harmonic of the solid laser has a shape which has an aspect ratio of 10 or more.
Dependencies are inferred from the claim text.