Laser apparatus, laser annealing method, and manufacture method of a semiconductor device

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over an insulating film;
• irradiating a front side of the semiconductor film with a laser light generated from a solid state laser;
• reflecting the laser light transmitted through the semiconductor film by a reflective member provided below the insulating film;
• irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
• and
• forming an active region comprising a source region, a drain region, and a channel region using the semiconductor film.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over an insulating film;
• irradiating a front side of the semiconductor film with a laser light generated from a solid state laser with an angle of incident of 45° to 90° with respect to the front side of the substrate;
• reflecting the laser light by a reflective member provided below the insulating film;
• irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
• and
• forming an active region comprising a source region, a drain region, and a channel region using the semiconductor film.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over an insulating film;
• irradiating a front side of the semiconductor film with a laser light generated from a solid state laser;
• reflecting the laser light by a reflective member provided below the insulating film;
• irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
• patterning the semiconductor film to form an island-like semiconductor film;
• forming a gate insulating film over the island-like semiconductor film;
• and
• forming a gate electrode over the gate insulating film.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over an insulating film;
• irradiating a front side of the semiconductor film with a laser light generated from a solid state laser;
• reflecting the laser light transmitted through the semiconductor film by a reflective member provided below the insulating film;
• irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
• patterning the semiconductor film to form an island-like semiconductor film;
• forming a gate insulating film over the island-like semiconductor film;
• and
• forming a gate electrode over the gate insulating film.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over an insulating film;
• irradiating a front side of the semiconductor film with a laser light generated from a solid state laser with an angle of incident of 45 to 90° with respect to the front side of the substrate;
• reflecting the laser light by a reflective member provided below the insulating film;
• irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
• patterning the semiconductor film to form an island-like semiconductor film;
• forming a gate insulating film over the island-like semiconductor film;
• and
• forming a gate electrode over the gate insulating film.