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US 5,240,876 AGranted
Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process
AssigneeHarris Corporation
InventorsStephen J. Gaul, George V. Rouse
Life of this patent
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Abstract
An SOI wafer is formed having a silicon-germanium layer between the epitaxial layer of the device and the insulative layer. The process includes bonding a second substrate to a silicon-germanium layer on a first substrate by an intermediate insulative layer. The first substrate is removed down to the silicon-germanium layer and the silicon layer is epitaxially formed on the silicon-germanium layer.
Claims8
A method of fabricating a silicon on insulator wafer comprising:
- depositing a layer of silicon-germanium on a first substrate;
- bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer;
- removing said first substrate down to said silicon-germanium layer;
- epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed;
- and
- forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer extending from said exposed surface down to said intermediate insulative layer.
3 more elements
A method of fabricating a silicon on insulator wafer comprising:
- depositing a layer of silicon-germanium on a first substrate;
- bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer;
- removing said first substrate down to said silicon-germanium layer;
- epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed;
- and
- forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer wherein said silicon-germanium layer produces a denuded zone in said epitaxial silicon layer.
3 more elements
A method of fabricating a silicon on insulator wafer comprising:
- depositing a layer of silicon-germanium on a first substrate;
- bonding a second substrate to said silicon-germanium layer by an intermediate insulative layer;
- removing said first substrate down to said silicon-germanium layer;
- epitaxially forming a silicon layer on said silicon-germanium layer to have an exposed surface into which homojunction devices are to be formed;
- and
- forming a homojunction device in said epitaxial silicon layer having active regions in said epitaxial silicon layer wherein said silicon-germanium layer forms a layer of low minority carrier lifetime between said epitaxial silicon layer and said intermediate insulative layer.
3 more elements
Dependencies are inferred from the claim text.