Laser annealing method and manufacturing method of a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Koichiro Tanaka, Kenji Kasahara, Ritsuko Kawasaki
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Abstract
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
Claims36
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over an insulating film;
- irradiating a front side of the semiconductor film with a laser light generated from a solid state laser;
- reflecting the laser light by a reflective member provided below the insulating film;
- irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
- forming an active region comprising a source region, a drain region, and a channel region using the semiconductor film;
- and
- wherein a substrate is interposed between the reflective member and the insulating film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over an insulating film;
- irradiating a front side of the semiconductor film with a laser light generated from a solid state laser;
- reflecting the laser light transmitted through the semiconductor film by a reflective member provided below the insulating film;
- irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
- and
- forming an active region comprising a source region, a drain region, and a channel region using the semiconductor film;
- and
- wherein a substrate is interposed between the reflective member and the insulating film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over an insulating film;
- irradiating a front side of the semiconductor film with a laser light generated from a solid state laser with an angle of incident of 45° to 90° with respect to the front side of the substrate;
- reflecting the laser light by a reflective member provided below the insulating film;
- irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
- and
- forming an active region comprising a source region, a drain region, and a channel region using the semiconductor film;
- and
- wherein a substrate is interposed between the reflective member and the insulating film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over an insulating film;
- irradiating a front side of the semiconductor film with a laser light generated from a solid state laser;
- reflecting the laser light by a reflective member provided below the insulating film;
- irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
- patterning the semiconductor film to form an island-like semiconductor film;
- forming a gate insulating film over the island-like semiconductor film;
- forming a gate electrode over the gate insulating film;
- and
- wherein a substrate is interposed between the reflective member and the insulating film.
A method for manufacturing a semiconductor device according to claim , wherein the laser light is continuous wave laser beam.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over an insulating film;
- irradiating a front side of the semiconductor film with a laser light generated from a solid state laser;
- reflecting the laser light transmitted through the semiconductor film by a reflective member provided below the insulating film;
- irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
- patterning the semiconductor film to form an island-like semiconductor film;
- forming a gate insulating film over the island-like semiconductor film;
- forming a gate electrode over the gate insulating film;
- and
- wherein a substrate is interposed between the reflective member and the insulating film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over an insulating film;
- irradiating a front side of the semiconductor film with a laser light generated from a solid state laser with an angle of incident of 45 to 90° with respect to the front side of the substrate;
- reflecting the laser light by a reflective member provided below the insulating film;
- irradiating a back side of the semiconductor film with the laser light reflected by the reflected member;
- patterning the semiconductor film to form an island-like semiconductor film;
- forming a gate insulating film over the island-like semiconductor film;
- forming a gate electrode over the gate insulating film;
- and
- wherein a substrate is interposed between the reflective member and the insulating film.
Dependencies are inferred from the claim text.