Y10S 438/902
Capping layer
Y10S438/902 (Capping layer) appears on 145 US grants and 46 published applications in this corpus.
Search patents in Y10S- Granted patents
- 145
- Published applications
- 46
- Assignees
- 68
- Inventors
- 293
- Latest grant
- 4 Dec 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 8 | 0 |
| 1994 | 9 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 8 | 0 |
| 1998 | 6 | 0 |
| 1999 | 10 | 0 |
| 2000 | 10 | 0 |
| 2001 | 8 | 3 |
| 2002 | 8 | 10 |
| 2003 | 5 | 2 |
| 2004 | 10 | 7 |
| 2005 | 7 | 8 |
| 2006 | 6 | 4 |
| 2007 | 4 | 3 |
| 2008 | 1 | 2 |
| 2009 | 3 | 3 |
| 2010 | 3 | 3 |
| 2011 | 4 | 1 |
| 2012 | 4 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Diodes, and methods of forming diodes4 Dec 2012US 8,323,995 B2Micron Technology, Inc.
- Cleaning method and substrate processing apparatus31 Jul 2012US 8,231,732 B2Tokyo Electron Limited
- Ultra-thin film formation using gas cluster ion beam processing24 Jul 2012US 8,226,835 B2TEL Epion Inc.
- Low-H plasma treatment with N2 anneal for electronic memory devices19 Jun 2012US 8,202,810 B2Spansion LLC
- Semiconductor device having an organic anti-reflective coating (ARC) and method therefor18 Oct 2011US 8,039,389 B2Freescale Semiconductor, Inc.
- Diodes, and Methods Of Forming Diodes18 Aug 2011US 2011/0201200 A1Micron Technology, Inc.
- Diodes, And Methods Of Forming Diodes30 Dec 2010US 2010/0330770 A1Micron Technology, Inc.
- Ultra-thin film formation using gas cluster ion beam processing9 Sep 2010US 2010/0227142 A1TEL Epion Inc.
- Method Using Multiple Layer Annealing Cap for Fabricating Group III-Nitride Semiconductor Device Structures and Devices Formed Thereby3 Jun 2010US 2010/0133656 A1United States Government as represented by the Secretary of the Army
- Diodes, And Methods Of Forming Diodes3 Dec 2009US 2009/0294967 A1Micron Technology, Inc.
Most cited
By later US patents
- Forming capping layer over metal wire structure using selective atomic layer deposition590US 7,084,060 B1International Business Machines Corporation · 2006
- Metal silicidation methods and methods for using same399US 6,127,249 AMicron Technology, Inc. · 2000
- Bilayer metallization cap for photolithography286US 5,219,788 AIBM Corporation · 1993
- Method of manufacturing P-type compound semiconductor198US 5,306,662 ANichia Chemical Industries, Ltd. · 1994
- Dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer186US 6,037,664 A2000