Diodes, and methods of forming diodes
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Bhaskar Srinivasan
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Abstract
Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
Claims9
A method of forming a diode, comprising:
- forming a metal silicide-containing structure, the metal silicide-containing structure having a surface that is silicon rich relative to other metal silicide of the structure;
- oxidizing said surface to form SiO2, and leaving some of the metal silicide not oxidized;
- the metal silicide that is not oxidized being at least part of a first electrode;
- depositing at least one metal-containing oxide across the SiO2;
- forming a second electrode over said at least one metal-containing oxide;
- and
- wherein the first electrode, SiO2, at least one metal-containing oxide, and second electrode together form a construction that conducts current between the first and second electrodes when voltage of one polarity is applied to the construction, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the construction.
A method of forming a diode, comprising:
- forming a tantalum silicide-containing structure, the tantalum silicide-containing structure having a surface that is silicon rich relative to other tantalum silicide of the structure;
- oxidizing said surface to form TaSiOx, where “x” is greater than zero, a portion of the tantalum-silicide-containing structure not being oxidized and being at least a part of a first electrode;
- depositing at least one metal-containing oxide across the TaSiOx;
- forming a second electrode over said at least one metal-containing oxide;
- and
- wherein the first electrode, TaSiOx, at least one metal-containing oxide, and second electrode together form a construction that conducts current between the first and second electrodes when voltage of one polarity is applied to the construction, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the construction.
A method of forming a diode, comprising:
- forming a first electrode;
- forming a metal halide layer over the first electrode, the metal halide layer being formed under conditions which keep a temperature of the metal halide layer at less than or equal to about 450° C.;
- depositing at least one metal-containing oxide across the metal halide layer;
- forming a second electrode over said at least one metal-containing oxide;
- and
- wherein the first electrode, metal halide layer, at least one metal-containing oxide, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure.
A diode, comprising:
- a first electrode;
- a metal halide layer over and directly against the first electrode;
- at least one metal-containing oxide over the metal halide layer;
- a second electrode over said at least one metal-containing oxide;
- and
- wherein the first electrode, metal halide layer, at least one metal-containing oxide, and second electrode together form a structure that is configured to conduct current between the first and second electrodes when voltage of one polarity is applied to the structure, and that is configured to inhibit current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure.
Dependencies are inferred from the claim text.