Method Using Multiple Layer Annealing Cap for Fabricating Group III-Nitride Semiconductor Device Structures and Devices Formed Thereby

A method of preventing the escape of nitrogen during the activation of ion implanted dopants in a Group III-nitride semiconductor without damaging the Group III-nitride semiconductor comprising:

• depositing a first layer of another Group III-nitride that acts as an adhesion layer onto the Group III-nitride semiconductor;
• depositing a second layer of a Group III-nitride that acts as a mechanical supporting layer;
• said first and second layers forming an annealing cap to prevent the escape of the nitrogen component of the Group III-nitride semiconductor;
• annealing the Group III-nitride semiconductor at a temperature in the range of approximately 1100-1250° C.;
• and
• selectively removing the first and second layers from the Group III-nitride semiconductor without damaging said Group III-nitride semiconductor.

A semiconductor device comprising a doped Group III-nitride semiconductor formed by a method comprising:

• depositing a first layer of another Group III-nitride that acts as an adhesion layer onto the Group III-nitride semiconductor;
• depositing a second layer of a Group III-nitride that acts as a mechanical supporting layer;
• said first and second layers forming an annealing cap to prevent the escape of the nitrogen component of the Group III-nitride semiconductor;
• annealing the Group III-nitride semiconductor at a temperature in the range of approximately 1100-1250° C.