Y10S 438/90
Bulk effect device making
Y10S438/90 (Bulk effect device making) appears on 179 US grants and 158 published applications in this corpus.
Search patents in Y10S- Granted patents
- 179
- Published applications
- 158
- Assignees
- 76
- Inventors
- 242
- Latest grant
- 1 Dec 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 1 | 6 |
| 2003 | 8 | 11 |
| 2004 | 9 | 6 |
| 2005 | 3 | 4 |
| 2006 | 5 | 21 |
| 2007 | 9 | 18 |
| 2008 | 21 | 22 |
| 2009 | 9 | 16 |
| 2010 | 31 | 14 |
| 2011 | 23 | 16 |
| 2012 | 10 | 4 |
| 2013 | 6 | 4 |
| 2014 | 5 | 4 |
| 2015 | 6 | 6 |
| 2016 | 3 | 1 |
| 2017 | 2 | 1 |
| 2018 | 2 | 2 |
| 2019 | 1 | 0 |
| 2020 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Front to back resistive random-access memory cells1 Dec 2020US 10,855,286 B2Microsemi SoC Corporation
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET11 Feb 2020US 10,559,500 B2Renesas Electronics Corporation
- Front to back resistive random access memory cells9 Apr 2019US 10,256,822 B2Microsemi SoC Corporation
- Resistive random access memory cells5 Jun 2018US 9,991,894 B2Microsemi SoC Corporation
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET29 May 2018US 9,984,934 B2Renesas Electronics Corporation
- Front to back resistive random-access memory cells9 Jan 2020US 2020/0013952 A1Microsemi SoC Corporation
- Front to back resistive random access memory cells23 Aug 2018US 2018/0241398 A1Microsemi SoC Corporation
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage misfet16 Aug 2018US 2018/0233414 A1Renesas Electronics Corporation
- Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage misfet20 Jul 2017US 2017/0207128 A1Renesas Electronics Corporation
- Manufacturing method of semiconductor device28 Jul 2016US 2016/0218040 A1Renesas Electronics Corporation
Most cited
By later US patents
- Chalcogenide memory cell with a plurality of chalcogenide electrodes671US 5,920,788 AMicron Technology, Inc. · 1999
- Chalcogenide memory cell with a plurality of chalcogenide electrodes360US 5,789,758 AMicron Technology, Inc. · 1998
- Amorphous silicon memory300US 5,360,981 ABritish Telecommunications Public Ltd.Co. · 1994
- Spacer chalcogenide memory method and device231US 6,864,503 B2Macronix International Co., Ltd. · 2005
- Phase change material electronic memory structure and method for forming229US 6,605,821 B1Hewlett-Packard Development Company, L. P. · 2003