Manufacturing method of semiconductor device
AssigneeRenesas Electronics Corporation
InventorsKoji MAEKAWA, Tatsuyoshi MIHARA
Life of this patent
Estimating the term…
Abstract
An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces of the insulating films corresponding to the sidewalls of the first and second gate electrodes are removed to leave the sidewall spacers over the side surfaces of the insulating film corresponding to the sidewalls of the third gate electrode. Then, the sidewall spacers and the insulating films are etched back, so that the sidewall spacers are formed of the insulating film over the sidewalls of the first, second, and third gate electrodes.
Claims18
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) providing a semiconductor substrate;
- (b) forming a first gate electrode via a first gate insulating film and a second gate electrode via a second gate insulating film over the semiconductor substrate;
- (c) forming a first insulating film over the semiconductor substrate to cover the first gate electrode and the second gate electrode, the first insulating film having first portions on upper surfaces of first and second gate electrodes and second portions on side surfaces of first and second gate electrodes;
- (d) forming a first sidewall insulating film selectively formed on the second portions at the side surfaces of the second gate electrode;
- (e) after the step (d), etching back the first sidewall insulating film and the first insulating film to thereby form a second sidewall insulating film with a first width made of the first insulating film, over the side surface of the first gate electrode and a third sidewall insulating film with a second width made of the first insulating film, over the side surface of the second gate electrode,
- wherein the first width is smaller than the second width.
Dependencies are inferred from the claim text.