Phase change material electronic memory structure and method for forming

An electronic memory structure comprising:

• a substrate;
• a substantially planar first conductor formed adjacent to the substrate;
• an interconnection layer formed adjacent to the first conductor;
• a phase change material element formed adjacent to the interconnection layer;
• the interconnection layer comprising:
• a conductive interconnect structure extending from the first conductor to the phase change material element, the interconnect structure having a first surface physically connected to the first conductor, the interconnect structure having a second surface attached to the phase change material element, the conductive interconnect structure being formed from outer edges of a conductive trench;
• the phase change material element comprising a phase change surface physically connected to the interconnection layer, the phase change surface having a phase change surface area, a minority amount of the phase change surface area being physically connected to the conductive interconnect structure;
• and
• a substantially planar second conductor formed adjacent to the phase change material element.

A computing system comprising:

• a processing unit;
• a RAM memory structure that the processing unit can store and access information, the RAM memory structure comprising;
• a substrate;
• a substantially planar first conductor formed adjacent to the substrate;
• an interconnection layer formed adjacent to the first conductor;
• a phase change material element formed adjacent to the interconnection layer;
• the interconnection layer comprising;
• a conductive interconnect structure extending from the first conductor to the phase change material element, the interconnect structure having a first surface physically connected to the first conductor, the interconnect structure having a second surface attached to the phase change material element, a second surface area of the second surface being substantially smaller than a first surface area of the first surface, the conductive interconnect structure being formed from outer edges of a conductive trench;
• and
• a substantially planar second conductor formed adjacent to the phase change material element.