H10W 42/80
Protecting against overcurrent or overload
Official title: protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60)
H10W42/80 (Protecting against overcurrent or overload) appears on 765 US grants and 836 published applications in this corpus.
Search patents in H10W- Granted patents
- 765
- Published applications
- 836
- Assignees
- 343
- Inventors
- 1,609
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 13 | 0 |
| 2001 | 15 | 10 |
| 2002 | 23 | 14 |
| 2003 | 16 | 12 |
| 2004 | 11 | 13 |
| 2005 | 8 | 19 |
| 2006 | 13 | 26 |
| 2007 | 14 | 32 |
| 2008 | 24 | 45 |
| 2009 | 16 | 22 |
| 2010 | 18 | 20 |
| 2011 | 32 | 25 |
| 2012 | 28 | 27 |
| 2013 | 25 | 32 |
| 2014 | 34 | 31 |
| 2015 | 26 | 27 |
| 2016 | 30 | 41 |
| 2017 | 38 | 37 |
| 2018 | 35 | 42 |
| 2019 | 41 | 55 |
| 2020 | 48 | 48 |
| 2021 | 39 | 35 |
| 2022 | 37 | 51 |
| 2023 | 38 | 44 |
| 2024 | 39 | 62 |
| 2025 | 25 | 43 |
| 2026 | 31 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Combined charge balance and edge termination surface passivation for a semiconductor device and methods of fabricating the same1 Sep 2026US 12,727,209 B2Ideal Semiconductor Devices, Inc.
- Power component and system with the power component25 Aug 2026US 12,716,963 B2ABB Schweiz AG
- Spark gaps with high current capability for electrical overstress detection and protection25 Aug 2026US 12,719,242 B2Analog Devices International Unlimited Company
- Adaptive desaturation detection method for overcurrent protection of power semiconductor device, and gate driver24 Sep 2026US 2026/0293691 A1Beijing National New Energy Vehicle Technology Innovation Center Co., Ltd.
- Semiconductor device, signal transmission device, electronic device, and vehicle27 Aug 2026US 2026/0254451 A1Rohm Co., Ltd.
- Semiconductor device20 Aug 2026US 2026/0248057 A1Rohm Co., Ltd.
- Power module for solid-state circuit breaker6 Aug 2026US 2026/0231762 A1Zapadoceska Univerzita V Plzni
- High voltage isolation package30 Jul 2026US 2026/0223699 A1
Most cited
By later US patents
- ESD/antenna diodes for through-silicon vias237US 8,264,065 B2Synopsys, Inc. · 2012
- Post passivation interconnection schemes on top of the IC chips135US 6,495,442 B1Magic Corporation · 2002
- Post passivation metal scheme for high-performance integrated circuit devices107US 6,649,509 B1Megic Corporation · 2003
- Post passivation metal scheme for high-performance integrated circuit devices88US 6,605,528 B1Megic Corporation · 2003
- Insulated gate type semiconductor device and method of manufacturing thereof85US 6,323,518 B1Hitachi, Ltd. · 2001