H10P 95/94
Hydrogenation or deuterisation
Official title: {Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma}
H10P95/94 (Hydrogenation or deuterisation) appears on 455 US grants and 385 published applications in this corpus.
Search patents in H10P- Granted patents
- 455
- Published applications
- 385
- Assignees
- 201
- Inventors
- 1,031
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 5 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 6 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 5 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 6 | 0 |
| 1994 | 8 | 0 |
| 1995 | 8 | 0 |
| 1996 | 10 | 0 |
| 1997 | 8 | 0 |
| 1998 | 12 | 0 |
| 1999 | 20 | 0 |
| 2000 | 18 | 0 |
| 2001 | 13 | 3 |
| 2002 | 11 | 24 |
| 2003 | 13 | 15 |
| 2004 | 16 | 15 |
| 2005 | 15 | 22 |
| 2006 | 9 | 12 |
| 2007 | 9 | 16 |
| 2008 | 10 | 15 |
| 2009 | 9 | 7 |
| 2010 | 15 | 10 |
| 2011 | 3 | 12 |
| 2012 | 10 | 13 |
| 2013 | 10 | 10 |
| 2014 | 10 | 18 |
| 2015 | 15 | 19 |
| 2016 | 19 | 21 |
| 2017 | 32 | 34 |
| 2018 | 17 | 15 |
| 2019 | 17 | 29 |
| 2020 | 22 | 14 |
| 2021 | 15 | 17 |
| 2022 | 7 | 10 |
| 2023 | 13 | 17 |
| 2024 | 10 | 6 |
| 2025 | 12 | 10 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing method and substrate processing apparatus14 Jul 2026US 12,685,048 B2Tokyo Electron Limited
- Deuterium-containing films28 Apr 2026US 12,616,006 B2APPLIED Materials.Inc.
- Chip defect modifying device and method9 Dec 2025US 12,494,384 B1China Electronic Product Reliability and Environmental Testing Research Institute
- Semiconductor device having deuterium diffused into the substrate and method of manufacturing the same25 Nov 2025US 12,482,661 B2Samsung Electronics Co., Ltd.
- Ion implantation for reduced hydrogen incorporation in amorphous silicon11 Nov 2025US 12,469,700 B2APPLIED Materials.Inc.
- Method of forming multi-gate transistors and resulting structures19 Feb 2026US 2026/0052957 A1
- Chip defect modifying device and method11 Dec 2025US 2025/0379068 A1China Electronic Product Reliability and Environmental Testing Research Institute
- Method for manufacturing semiconductor device27 Nov 2025US 2025/0366005 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same25 Sep 2025US 2025/0299956 A1Renesas Electronics Corporation
- Deuterium-treated ferroelectric devices and methods for fabricating the same28 Aug 2025US 2025/0275209 A1TetraMem Inc.
Most cited
By later US patents
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Low temperature process for annealing shallow implanted N+/P junctions287US 4,522,657 AWestinghouse Electric Corp. · 1985
- Method for in-situ cleaning of native oxide from silicon surfaces262US 5,899,752 AAPPLIED Materials.Inc. · 1999
- Active matrix panel and manufacturing method including TFTs having variable impurity concentration levels146US 5,563,427 ASeiko Epson Corporation · 1996
- Semiconductor device having a channel region including a vacancy-introduced polysilicon layer142US 5,847,411 AMatsushita Electric Industrial Co., Ltd. · 1998