Semiconductor device having deuterium diffused into the substrate and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• forming circuit blocks on a substrate, the substrate including a first surface and a second surface;
• forming a bias pad on the first surface of the substrate;
• bonding a deuterium exchange structure to the second surface of the substrate, the deuterium exchange structure including a porous metal plate and a hydrogen ion exchange membrane on a top surface of the porous metal plate;
• implanting deuterium into the deuterium exchange structure using plasma processing;
• and
• diffusing the deuterium from the deuterium exchange structure into the substrate through the second surface of the substrate by applying a first voltage to the bias pad.

A method of manufacturing a semiconductor device, the method comprising:

• forming circuit blocks on a substrate, the substrate including a first surface and a second surface;
• forming a bias pad on the first surface of the substrate;
• bonding an ion exchange structure to the second surface of the substrate;
• diffusing impurities in the substrate from the second surface of the substrate into the ion exchange structure;
• removing the ion exchange structure;
• bonding a deuterium exchange structure to the second surface of the substrate;
• implanting deuterium into the deuterium exchange structure using plasma processing;
• and
• diffusing the deuterium from the deuterium exchange structure into the substrate through the second surface of the substrate.