Ion implantation for reduced hydrogen incorporation in amorphous silicon
AssigneeApplied Materials, Inc.
InventorsRui Cheng, Rajesh Prasad, Karthik Janakiraman, Gautam K. Hemani, Krishna Nittala, Shan Tang, Qi Gao
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Abstract
Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of hydrogen incorporation. The methods may include performing a beamline ion implantation process or plasma doping process on the layer of amorphous silicon. The methods may include removing hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.
Claims20
A semiconductor processing method comprising:
- forming a layer of amorphous silicon on a semiconductor substrate, wherein the layer of amorphous silicon is characterized by a first amount of hydrogen incorporation;
- and
- performing an ion implantation process on the layer of amorphous silicon to remove hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation, wherein the ion implantation process is performed at a temperature of greater than or about 200° C.
A semiconductor processing method comprising:
- forming a thin-film transistor on a semiconductor substrate, wherein the thin-film transistor comprises a layer of amorphous silicon characterized by a first amount of hydrogen incorporation;
- transferring the semiconductor substrate to a beamline ion implantation chamber or plasma doping chamber;
- and
- performing a beamline ion implantation or plasma doping process on the thin-film transistor to reduce an amount of hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation, wherein the second amount of hydrogen incorporation is less than or about 5 at. %.
A semiconductor processing method comprising:
- forming a thin-film transistor on a semiconductor substrate within a first semiconductor processing chamber, wherein the thin-film transistor comprises a layer of amorphous silicon characterized by a first amount of hydrogen incorporation, and wherein the layer of amorphous silicon is disposed between at least two additional layers of material;
- transferring the semiconductor substrate from the first semiconductor processing chamber to an ion implantation chamber;
- performing an ion implantation process on the thin-film transistor, wherein the ion implantation process comprises a beamline ion implantation process or a plasma doping implantation process to reduce an amount of hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation, wherein the second amount of hydrogen incorporation is less than or about 5 at. %.
Dependencies are inferred from the claim text.