H10P 95/50
Alloying conductive materials with semiconductor bodies
Official title: {Alloying conductive materials with semiconductor bodies}
H10P95/50 (Alloying conductive materials with semiconductor bodies) appears on 212 US grants and 95 published applications in this corpus.
Search patents in H10P- Granted patents
- 212
- Published applications
- 95
- Assignees
- 87
- Inventors
- 279
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 30 | 0 |
| 1977 | 21 | 0 |
| 1978 | 8 | 0 |
| 1979 | 17 | 0 |
| 1980 | 8 | 0 |
| 1981 | 8 | 0 |
| 1982 | 3 | 0 |
| 1983 | 8 | 0 |
| 1984 | 1 | 0 |
| 1985 | 6 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 2 |
| 2005 | 3 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 1 |
| 2010 | 0 | 1 |
| 2011 | 1 | 0 |
| 2012 | 0 | 4 |
| 2013 | 1 | 5 |
| 2014 | 5 | 8 |
| 2015 | 5 | 8 |
| 2016 | 11 | 16 |
| 2017 | 12 | 7 |
| 2018 | 8 | 11 |
| 2019 | 10 | 10 |
| 2020 | 12 | 7 |
| 2021 | 3 | 4 |
| 2022 | 2 | 2 |
| 2023 | 3 | 5 |
| 2024 | 1 | 1 |
| 2025 | 1 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method for manufacturing the same28 Apr 2026US 12,615,839 B2Mitsubishi Electric Corporation
- Gallium nitride-based compound semiconductor device27 May 2025US 12,317,564 B2Xiamen Sanan Integrated Circuit Co., Ltd.
- Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealing30 Apr 2024US 11,973,118 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Patterning platinum by alloying and etching platinum alloy23 May 2023US 11,658,034 B2Texas Instruments Incorporated
- Wafer-level package structure24 Jan 2023US 11,562,980 B2Ningbo Semiconductor International Corporation
- Method for manufacturing superjunction trench gate mosfet3 Oct 2024US 2024/0332402 A1Hua Hong Semiconductor (Wuxi) Limited
- Sputter targets and sources for self-doped source and drain contacts28 Dec 2023US 2023/0420246 A1Intel Corporation
- Selector material, selector unit and preparation method thereof, and memory structure31 Aug 2023US 2023/0276638 A1Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Patterning platinum by alloying and etching platinum alloy10 Aug 2023US 2023/0253211 A1Texas Instruments Incorporated
- Field effect transistor with reduced source/drain resistance27 Apr 2023US 2023/0127783 A1International Business Machines Corporation
Most cited
By later US patents
- Transparent substrate light emitting diodes with directed light output280US 5,793,062 AHewlett-Packard Company · 1998
- GaN LEDs with improved output coupling efficiency220US 6,091,085 AAgilent Technologies, Inc. · 2000
- Electrical method of making conductive paths in silicon111US 4,534,100 AThe United States of America as represented by the Secretary of the Air Force · 1985
- Transparent substrate light emitting diodes with directed light output85US 6,015,719 AHewlett-Packard Company · 2000
- Method for making solid state device utilizing ion implantation techniques58US 5,082,793 A1992