Electrical method of making conductive paths in silicon

A method of making electrical conductive paths between opposite surfaces of a semiconductor substrate having a dopant therethrough comprising the steps of:

• forming oxide layers on said opposite surfaces of said substrate;
• forming a plurality of contact openings in said oxide layers by photolithography;
• diffusing dopants into said substrate through said contact openings, a p-type dopant diffused into a first surface of said substrate, and an n-type dopant diffused into a second surface of said substrate, a concentration of a diffusing dopant exceeding said dopant of said substrate being of the same type;
• removing diffusing dopants from said oxide layers and said substrate surfaces;
• depositing selectively metal into said contact openings to form metal contacts;
• connecting electrically a plurality of said metal contacts with strips of conductive material;
• applying a current source across selected metal contacts;
• causing breakdown current channels between said selected metal contacts with said current source whereby said metal of said metal contacts flows in said channels;
• and
• removing said oxide layers, said strips, and said metal contacts.