Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsKoichi Nishi, Koji Tanaka, Shinya Soneda, Shigeto Honda, Naoyuki Takeda
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Abstract
A semiconductor device includes a first electrode and a second electrode. The first electrode is connected to a collector layer and a first portion on the collector layer side of a cathode layer. The second electrode is connected to a second portion of the cathode layer excluding the first portion. A work function of the first electrode is larger than a work function of the second electrode, and one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in a thickness direction of the semiconductor substrate.
Claims10
A semiconductor device comprising:
- a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface in a thickness direction of the semiconductor substrate, in which an IGBT region and a diode region are defined;
- an emitter layer of a first conductivity type provided on a first main surface side being a side of the first main surface in the IGBT region;
- a collector layer of a second conductivity type provided on a second main surface side being a side of the second main surface in the IGBT region;
- an anode layer of the second conductivity type provided on the first main surface side in the diode region;
- a cathode layer of the first conductivity type provided on the second main surface side in the diode region;
- a first electrode connected to the collector layer and a first portion on a side of the collector layer in the cathode layer, wherein a portion of the first electrode that contacts the first portion is positioned directly below the cathode layer in the thickness direction of the semiconductor substrate;
- and
- a second electrode connected to a second portion of the cathode layer that is different from the first portion,
- wherein a work function of the first electrode is larger than a work function of the second electrode,
- one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in the thickness direction of the semiconductor substrate, and
- the first electrode is spaced from the second portion.
A semiconductor device comprising:
- a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface in a thickness direction of the semiconductor substrate, in which an IGBT region and a diode region are defined;
- an emitter layer of a first conductivity type provided on a first main surface side being a side of the first main surface in the IGBT region;
- a collector layer of a second conductivity type provided on a second main surface side being a side of the second main surface in the IGBT region;
- an anode layer of the second conductivity type provided on the first main surface side in the diode region;
- a cathode layer of the first conductivity type provided on the second main surface side in the diode region;
- a first electrode connected to the collector layer and a first portion on a side of the collector layer in the cathode layer, wherein a portion of the first electrode that contacts the first portion is positioned directly below the cathode layer in the thickness direction of the semiconductor substrate;
- and
- a second electrode connected to a second portion of the cathode layer that is different from the first portion,
- wherein a work function of the first electrode is larger than a work function of the second electrode,
- one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in the thickness direction of the semiconductor substrate, and
- the first electrode is directly connected to the collector layer and the first portion, and the second electrode is directly connected to the second portion.
Dependencies are inferred from the claim text.