Sputter targets and sources for self-doped source and drain contacts

An integrated circuit structure, comprising:

• a source or drain region;
• a contact coupled to the source or drain region;
• a region comprising one or more of silicide, germanide, and/or germanosilicide, the region between the source or drain region and the contact, wherein a portion of the source or drain region is at a distance that is at most 5 nanometers (nm) from the region comprising the one or more of silicide, germanide, and/or germanosilicide;
• and
• a dopant within the region and within the source or drain region, wherein a concentration of the dopant within the region is within 20% of a concentration of the dopant within the portion of the source or drain region.

A method for forming silicide, germanide, and/or germanosilicide adjacent to a source or drain region, the method comprising:

• forming the source or drain region, the source or drain region covered by dielectric material;
• forming a recess within the dielectric material, the recess landing on the source or drain region;
• depositing metal within a bottom section of the recess and adjacent to the source or drain region, wherein the metal to be deposited is doped with one or more dopants prior to the deposition;
• and
• processing the metal and the source or drain region, to form the silicide, germanide, and/or germanosilicide adjacent to the source or drain region.