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US 11,973,118 B2Granted
Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealing
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsAndréa-Carolina Quintero Colmena, Pablo Acosta Alba, Philippe Rodriguez
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Abstract
The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.
Claims18
A method for producing ohmic contacts, comprising a metal, a semiconductor and tin, the method comprising:
- a) forming a first layer comprising an alloy of the semiconductor and tin;
- b) then, on the first layer, forming a second layer comprising the metal;
- and
- c) laser annealing at least the first layer at an energy density of from 0.1 to 2 J/cm2, wherein a melting temperature of the alloy of the semiconductor and tin is reached by the laser annealing,
- wherein the method does not produce segregation and agglomeration of tin.
2 more elements
Dependencies are inferred from the claim text.