Gallium nitride-based compound semiconductor device
AssigneeXiamen Sanan Integrated Circuit Co., Ltd.
InventorsShenghou Liu, Wenbi Cai
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Abstract
A GaN-based compound semiconductor device includes a GaN-based epitaxial structure and an annealed metal layered structure that is formed on the GaN-based epitaxial structure. The annealed metal layered structure includes a metallic barrier layer, a conductive unit, and a protective unit which is formed on a lateral surface of the conductive unit. The metallic barrier layer and the conductive unit are sequentially disposed on the GaN-based epitaxial structure in such order. An ohmic contact is formed between the GaN-based epitaxial structure and the annealed metal layered structure. The protective unit includes a metal oxide material having one of NiAlO, AuAlO, and a combination thereof.
Claims8
A gallium nitride (GaN)-based compound semiconductor device, comprising:
- a GaN-based epitaxial structure;
- and
- an annealed metal layered structure that is formed on said GaN-based epitaxial structure, and that includes a metallic barrier layer, a conductive unit and a protective unit which is formed on a lateral surface of said conductive unit, said metallic barrier layer and said conductive unit being sequentially disposed on said GaN-based epitaxial structure in such order, an ohmic contact being formed between said GaN-based epitaxial structure and said annealed metal layered structure,
- wherein said protective unit includes a metal oxide material having one of NiAlO, AuAlO, and a combination thereof.
Dependencies are inferred from the claim text.