H10P 90/16
By reclaiming or re-processing
Official title: {by reclaiming or re-processing}
H10P90/16 (By reclaiming or re-processing) appears on 123 US grants and 140 published applications in this corpus.
Search patents in H10P- Granted patents
- 123
- Published applications
- 140
- Assignees
- 74
- Inventors
- 308
- Latest grant
- 17 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 6 |
| 2002 | 3 | 5 |
| 2003 | 7 | 2 |
| 2004 | 5 | 4 |
| 2005 | 1 | 11 |
| 2006 | 5 | 8 |
| 2007 | 6 | 5 |
| 2008 | 6 | 11 |
| 2009 | 3 | 11 |
| 2010 | 11 | 12 |
| 2011 | 7 | 14 |
| 2012 | 9 | 4 |
| 2013 | 10 | 2 |
| 2014 | 5 | 5 |
| 2015 | 2 | 3 |
| 2016 | 4 | 2 |
| 2017 | 0 | 2 |
| 2018 | 4 | 4 |
| 2019 | 3 | 2 |
| 2020 | 1 | 3 |
| 2021 | 2 | 2 |
| 2022 | 1 | 7 |
| 2023 | 2 | 10 |
| 2024 | 5 | 2 |
| 2025 | 5 | 2 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing SiC semiconductor device and SiC semiconductor device17 Mar 2026US 12,581,873 B2Kwansei Gakuin Educational Foundation
- Fully automated wafer debonding system and method thereof3 Feb 2026US 12,543,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate18 Nov 2025US 12,473,198 B2Soitec
- Crystal efficient SiC device wafer production18 Nov 2025US 12,476,149 B2II-Vi Advanced Materials, LLC
- Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on an SiC carrier substrate15 Jul 2025US 12,362,173 B2Soitec
- Semiconductor wafer providing method and semiconductor wafer providing system21 May 2026US 2026/0139407 A1NGK Insulators, Ltd.
- Implantation process to mitigate bowing of wafers introduced by splitting process17 Jul 2025US 2025/0232977 A1
- Method of processing a semiconductor wafer5 Jun 2025US 2025/0183031 A1Infineon Technologies AG
- Crystal efficient sic device wafer production15 Aug 2024US 2024/0274468 A1II-Vi Advanced Materials, LLC
- Method for preparing the residue of a donor substrate, a layer of which has been removed by delamination11 Apr 2024US 2024/0120191 A1
Most cited
By later US patents
- Method for producing semiconductor substrate513US 5,854,123 ACanon Kabushiki Kaisha · 1998
- Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus120US 6,664,169 B1Canon Kabushiki Kaisha · 2003
- Process for restoring rejected wafers in line for reuse as new109US 5,920,764 AInternational Business Machines Corporation · 1999
- Method of producing semiconductor member and method of producing solar cell99US 6,190,937 B1Canon Kabushiki Kaisha · 2001
- Semiconductor chip reclamation technique involving multiple planarization processes69US 5,656,554 AInternational Business Machines Corporation · 1997